RFID

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					EMRAM (Magnetoresistive Random Access Memory) is a non-volatile Random Access Memory that combines the fast Read and Write performance of SRAM, and the high data storage capability of DRAM. It has infinite cycle endurance, high data storage capacity and zero quiescent power.
MCU	RAID	RFID	Smart Card	SRAM Replacement
EMRAM for RFID Tag Key Benefits of using Embedded EMRAM RFID tag with Integrated Circuit (IC) typically utilizes one or more of the following types of memory: ROM, EEPROM and RAM. Memory is either embedded on the IC or attached as discrete components. As an embedded memory on IC, EMRAM is a high performance yet low cost alternative to these memory types and placement options. The cost savings is most significant when more than one memory types are used in the RFID tag. Key Embedded EMRAM Features Very fast read and write: Read and write times are typically less than 50ns. Unlimited data storage endurance: EMRAM is non-volatile, and retains data ad infinitum. Excellent Read & Write endurance: EMRAM has unlimited write endurance. Simple memory management: EMRAM has a random addressable data structure and uses a single voltage for Read & Write. Enables coding flexibility: Read-Only sectors are created post IC fabrication during programming. Application codes need not be designed into the machine code of the IC. Smallest silicon footprint: When embedded, EMRAM layers sit on top of the Logic IC. This could reduce chip surface area by up to 40%, significantly increasing the number of chips per wafer, and lowering unit cost as a result. With a 1T-8bit architecture, EMRAM takes up less space than SRAM and EEPROM. Low power. Radiation hardened: Inherently radiation hardened, EMRAM has zero soft error rate. Elevated temperature endurance: EMRAM storage layers are stable beyond 200˚C with compatible silicon substrates. Information furnished is believed to be accurate and reliable. However, NLSC assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of NLSC. Specifications mentioned in this publication are subject to change without notice. This publication supercedes and replaces all information previously supplied. NLSC products are not authorized for use as critical components in life support devices or systems without express written approval of NLSC. © 2004 Northern Lights Semiconductor Corp – All Rights Reserved www.nlsemi.com